PN junction current problem

Consider an ideal pn junction diode at T=300K operating in the forwared bias region. Calculate the change in diode voltage that will cause a factor of 10 increase in current. I was trying to use the ideal diode current equation, but I don't know how to find Is from the given information. How do I work this problem?

Schottky diode reverse saturation

A schottky diode at T=300 is formed between tungsten and n-type silcon doped at Nd=10^16. The cross sectional area is A=10^-4 cm^2. Determine the reverse saturation current at Vr=2V. Take into account Schottky barrier lowering. If I use Jst, I need to find Phi|b. Assuming, I can use Phi|b=Vbi+Ph|n, is Vbi the same as Vr here?

Diode Current Manipulation - A schottky diode and a pn junction diode have cross sectional areas a=10^-4. The reverse saturation current density of the pn junction diode is 3x10^-8 A/cm^2. The reverse saturation current density of the pn junction diode is 3x10^-12A/cm^2. Determine the forward bias voltage in each diode required to yeild diode currents of 1mA.

A schottky diode and a pn junction diode have cross sectional areas a=10^-4. The reverse saturation current density of the pn junction diode is 3x10^-8 A/cm^2. The reverse saturation current density of the pn junction diode is 3x10^-12A/cm^2. Determine the forward bias voltage in each diode required to yeild diode currents of 1mA. If I use Jst=A*T^2*exp( (-q*phi|bn) / KT) to find the voltage for the Schottky diode, how do I find phi|bn from the given information? IF I use J=q*Dn*npo/Ln+q*Dp*pno/Lp. How do I determine Ln, Lp, npo, pno, Dn, and Dp from the given information? Thank you.

pn junction characteristics

An example says, Na=10^18cm^-3 Nd=10^16cm^-3 Dp=10cm^2/s Dn=25cm^2/s tpo=10^-7s tno=10^-7s "We can then calculate the following parameters:" Lp=1.0x10^-3cm Ln=1.58X10^-3cm pno=2.25x10^4cm^-3 npo=2.25x10^2cm^-3 How were the lengths and minority carrier concentrations derived from the above information? and mathematically what is shottky barrier lowering? Thank you.

Surface potential Consider n-type silicon in an MOS structure. Let T=300K. Determine semiconductor doping so that |Q'sd(max)|=7.5x10^-9C/cm^2. Determine the surface potential that results int he maximum space charge width.

Consider n-type silicon in an MOS structure. Let T=300K. Determine semiconductor doping so that |Q'sd(max)|=7.5x10^-9C/cm^2. Determine the surface potential that results int he maximum space charge width.