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Physics, Solid State Physics
Year 3
fixed oxide charge
Consider an aluminum gate-silicon dioxide p type silicon MOS structure with tox=450 angstroms. The silicon doping is Na=2x10^11cm^-3 and the flat-band voltage is Vfb=-1.0V. Determine the fixed oxide charge Q'ss.
By OTA: Anand Mirji, MSEE
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