Schottky diode reverse saturation

A schottky diode at T=300 is formed between tungsten and n-type silcon doped at Nd=10^16.  The cross sectional area is A=10^-4 cm^2.  Determine the reverse saturation current at Vr=2V.  Take into account Schottky barrier lowering.

If I use Jst, I need to find Phi|b.  Assuming, I can use Phi|b=Vbi+Ph|n,  is Vbi the same as Vr here?