Quasi Fermi Level

I'm having trouble getting the answer the back of the book does after trying to calculate the quasi fermi level.

The book gets Efn-Efi=.3498eV; Efi-Efp=.2877eV

Q.  An n-type silicon sample with Nd=10^16cm-3 is steadily illuminated such that g'=10^21cm-s^-1.  If tn0=tp0=10^-6s, calculate the position of the quasi-Fermi levels for electrons and holes with respect to the intrinsic level (assume that ni=1.5x10^10cm^-3)

I am trying to use Efn-Efi=kt*ln((no+deltan)/ni)  ... however, the problem I'm having is with no + delta n over ni.

Is no=nd=10^16?  If so, then what is the excess delta n?

I thought tn0*g' would give me delta n, but this does not reflect the correct answer in the back of the book.
Thank you.