Bipolar Junction Transistor Part 1

*Note* I've posted this problem a couple of days ago and no one could help me on this one yet. Maybe this problem is too long, I'll break it into 3 questions for the OTAs. You don't have to do all 3 questions, do whatever part you know how to do. Please check my other posts under the same description title for the 2nd and 3rd part of the question. You are only required to do the question you see here. ======First Part===== A silicon n-p-n bipolar junction transistor is designed with emitter, base and collector doping levels of 10^19cm, 10^15cm and 5*10^17cm, respectively. Assuming the intrinsic carrier concentration (ni) in cilicon to be 10^10cm, calculate the Fermi Energy, Ef, re... click for more

Transistor Saturation

For the circuit of the figure attached, determine the required values of Rd, R1 and R2 so that the transistor operates in the saturation region with Id=0.5mA and Vd=3V. The enhancement mode PMOS transistor has Vt=-1V and K=0.5mAV^-2. What is the largest value Rd can have while maintaining the transistor in saturation?

Thevenin Equivalent

For the circuit section consisting of L, C1,V1 and V2, calculate the thevenin equivalent e.m.f and the impedance at terminals A and B. Please see attachment for diagram.

Electronics (about operational amplifier)

Show how an ideal Operational Amplifier with an open loop gain = A can be used to provide: i) a non-inverting amplifier with gain= +6v/v. ii) an inverting amplifier with gain= -3v/v. iii) an integrator with gain= +3. Explain the purpose of every component in your circuits. Please see attached for full question.

Electronics.

In schematics, ground and chassis may be assumed to be common, unless specifically stated otherwise. Please see attached for full question.